Infineon 3rd Generation Reverse Conducting IGBTs
Infineon's 3rd Generation Reverse Conducting IGBTs
have been optimized for lower switching and conduction losses. Reduced
power dissipation together with soft switching behavior allows better
thermal performance and EMI behavior resulting in lower system costs.
Excellent performance can be achieved at lower costs. Infineon RC-H
technology has set the benchmark of Tj(max) of 175°C to offer
higher lifetime reliability. Recent portfolio extension to 30A and 40A
at 1200V and 1350V defines the new trend for higher power density and
better reliability devices. 40A 1350V device is capable for switching up
to 50kHz with VCE(sat) value of 1.65V at 25°C – a staggering 5% lower loss than the next best competitor.